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‹ Monday, March 10, 2025 › |
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›8:00 (30min)
8:00 - 8:30 (30min)
Registration
8:30 - 9:00 (30min)
Opening
![]() ›9:00 (30min)
› Room Rovery - Bd Riou, 06660 Auron
9:00 - 9:30 (30min)
Invited talk - L. Cerutti
![]() MBE growth of mid-IR interband cascade lasers
9:30 - 10:50 (1h20)
ANTIMONIDES
![]() ›9:30 (20min)
V. Daumer - Antimonide based heterostructures
Antimonide based heterostructures: MBE growth strategies for infrared applications 9:30 - 9:50 (20min)
V. Daumer - Antimonide based heterostructures
Antimonide based heterostructures: MBE growth strategies for infrared applications
›9:50 (20min)
M. Bentley - InAs/GaInSb W-Quantum Well based Interband Cascade Lasers
InAs/GaInSb W-Quantum Well based Interband Cascade Lasers for Mid Infrared Emission 9:50 - 10:10 (20min)
M. Bentley - InAs/GaInSb W-Quantum Well based Interband Cascade Lasers
InAs/GaInSb W-Quantum Well based Interband Cascade Lasers for Mid Infrared Emission
›10:10 (20min)
P. Wojnar - One-dimensional nanostructures antimony triselenide
Formation of one dimensional nanostructures in the molecular beam epitaxy of antimony triselenide 10:10 - 10:30 (20min)
P. Wojnar - One-dimensional nanostructures antimony triselenide
Formation of one dimensional nanostructures in the molecular beam epitaxy of antimony triselenide
›10:30 (20min)
M. Fagot - Interband cascade lasers emitting below 3 µm
Interband cascade lasers emitting below 3 µm grown on GaAs substrate 10:30 - 10:50 (20min)
M. Fagot - Interband cascade lasers emitting below 3 µm
Interband cascade lasers emitting below 3 µm grown on GaAs substrate
›10:50 (20min)
10:50 - 11:10 (20min)
Coffee break
›11:10 (30min)
Invited talk - D. V. Dinh
Properties of ScN and (Sc,Al)N alloys grown by plasma-assisted molecular beam epitaxy › Room Rovery - Bd Riou, 06660 Auron
11:10 - 11:40 (30min)
Invited talk - D. V. Dinh
![]() Properties of ScN and (Sc,Al)N alloys grown by plasma-assisted molecular beam epitaxy
11:40 - 13:00 (1h20)
NITRIDES
![]() ›11:40 (20min)
Y. Cordier - ScAlN/GaN heterostructures
Ammonia-source molecular beam epitaxy of ScAlN/GaN heterostructures for high-power high-frequency applications 11:40 - 12:00 (20min)
Y. Cordier - ScAlN/GaN heterostructures
Ammonia-source molecular beam epitaxy of ScAlN/GaN heterostructures for high-power high-frequency applications
›12:00 (20min)
A.F. Saavedra - Fabrication of a-plane AlN pseudo-substrates
Fabrication of a-plane AlN pseudosubstrates grown by Molecular Beam Epitaxy 12:00 - 12:20 (20min)
A.F. Saavedra - Fabrication of a-plane AlN pseudo-substrates
Fabrication of a-plane AlN pseudosubstrates grown by Molecular Beam Epitaxy
›12:20 (20min)
H. Zhang - Fully Relaxed (In,Ga)N Pseudo-Substrates
Growth of Fully Relaxed (In,Ga)N Pseudo-Substrates by a Two-Step Protocol Without Ex-situ Patterning 12:20 - 12:40 (20min)
H. Zhang - Fully Relaxed (In,Ga)N Pseudo-Substrates
Growth of Fully Relaxed (In,Ga)N Pseudo-Substrates by a Two-Step Protocol Without Ex-situ Patterning
›12:40 (20min)
P. John - Epitaxy of Self-assembled (Al,Sc)N nanowires on metallic TiN
Epitaxy of self-assembled (Al,Sc)N nanowires on metallic TiN: Towards vertical and flexible piezoelectric nanogenerators 12:40 - 13:00 (20min)
P. John - Epitaxy of Self-assembled (Al,Sc)N nanowires on metallic TiN
Epitaxy of self-assembled (Al,Sc)N nanowires on metallic TiN: Towards vertical and flexible piezoelectric nanogenerators
›13:00 (1h)
13:00 - 14:00 (1h)
Lunch boxes
16:30 - 17:30 (1h)
NITRIDES
![]() ›16:30 (20min)
M. Canciani - Morphology and structure of In-rich InGaN nanocolumns
Tuning the morphology and structure of In-rich InGaN nanocolumns suitable for biomedical application 16:30 - 16:50 (20min)
M. Canciani - Morphology and structure of In-rich InGaN nanocolumns
Tuning the morphology and structure of In-rich InGaN nanocolumns suitable for biomedical application
›16:50 (20min)
M. Siekacz - near-UV Laser Diodes by Plasma-Assisted MBE
New generation of near-UV Laser Diodes by Plasma Assisted MBE 16:50 - 17:10 (20min)
M. Siekacz - near-UV Laser Diodes by Plasma-Assisted MBE
New generation of near-UV Laser Diodes by Plasma Assisted MBE
›17:10 (20min)
J. Brault - AlGaN based Heterostructures grown on hBN
AlGaN based Heterostructures grown on hBN by quasi van der Waals Molecular Beam Epitaxy for Ultra Violet Light Emitting Diodes 17:10 - 17:30 (20min)
J. Brault - AlGaN based Heterostructures grown on hBN
AlGaN based Heterostructures grown on hBN by quasi van der Waals Molecular Beam Epitaxy for Ultra Violet Light Emitting Diodes
›17:30 (30min)
Invited talk - M. Müller
Harnessing Redox Epitaxy for Tailored Functionalities at Oxide Heterointerfaces › Room Rovery - Bd Riou, 06660 Auron
17:30 - 18:00 (30min)
Invited talk - M. Müller
![]() Harnessing Redox Epitaxy for Tailored Functionalities at Oxide Heterointerfaces
18:00 - 19:00 (1h)
OXIDES
![]() ›18:00 (20min)
A. Karg - κ-Ga₂O₃ thin films and related heterostructures
κ-Ga₂O₃ thin films and related heterostructures grown by Suboxide-MBE and conventional MBE 18:00 - 18:20 (20min)
A. Karg - κ-Ga₂O₃ thin films and related heterostructures
κ-Ga₂O₃ thin films and related heterostructures grown by Suboxide-MBE and conventional MBE
›18:20 (20min)
A. Boelen - Elevated cryogenic permittivity of SrTiO3 films
Elevated cryogenic permittivity of epitaxial SrTiO3 films on silicon by stoichiometry and thickness control 18:20 - 18:40 (20min)
A. Boelen - Elevated cryogenic permittivity of SrTiO3 films
Elevated cryogenic permittivity of epitaxial SrTiO3 films on silicon by stoichiometry and thickness control
›18:40 (20min)
M. O. Bounab - Strong optical anisotropy in epitaxial SrO(SrTiO3)n
Strong optical anisotropy in epitaxial SrO(SrTiO3)n Ruddlesden–Popper thin layers 18:40 - 19:00 (20min)
M. O. Bounab - Strong optical anisotropy in epitaxial SrO(SrTiO3)n
Strong optical anisotropy in epitaxial SrO(SrTiO3)n Ruddlesden–Popper thin layers
20:00 - 23:00 (3h)
VEECO USER MEETING
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Session | Speech | Logistics | Break | Tour |