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›8:00 (30min)
8:00 - 8:30 (30min)
Registration
›8:30 (30min)
Invited talk - M. Brehm
Group-IV epitaxy at ultra-low temperatures for optoelectronic and quantum photonic applications
Group-IV epitaxy at ultra-low temperatures for optoelectronic and quantum photonic applications
› Room Rovery - Bd Riou, 06660 Auron
8:30 - 9:00 (30min)
Invited talk - M. Brehm
Room Rovery - Bd Riou, 06660 Auron
Group-IV epitaxy at ultra-low temperatures for optoelectronic and quantum photonic applications
https://eurombe2025.sciencesconf.org/data/program/596794.pdf 9:00 - 10:20 (1h20)
ULTRA-LOW TRE / PHOTONICS
Room Rovery - Bd Riou, 06660 Auron
›9:00 (20min)
M. Silvestre - GaSb on Ge, Ge-on-Si and Ge-on-SiGe-on-Si
Direct MBE growth of GaSb on Ge, Ge-on-Si and Ge-on-SiGe-on-Si platforms for integrated mid-infrared photonics
Direct MBE growth of GaSb on Ge, Ge-on-Si and Ge-on-SiGe-on-Si platforms for integrated mid-infrared photonics
9:00 - 9:20 (20min)
M. Silvestre - GaSb on Ge, Ge-on-Si and Ge-on-SiGe-on-Si
Direct MBE growth of GaSb on Ge, Ge-on-Si and Ge-on-SiGe-on-Si platforms for integrated mid-infrared photonics
›9:20 (20min)
M. Brehm - Ge-rich nanosheets on silicon-on-insulator
MBE-grown Ge-rich nanosheets on silicon-on-insulator as a planar platform for nanoelectronic devices
MBE-grown Ge-rich nanosheets on silicon-on-insulator as a planar platform for nanoelectronic devices
9:20 - 9:40 (20min)
M. Brehm - Ge-rich nanosheets on silicon-on-insulator
MBE-grown Ge-rich nanosheets on silicon-on-insulator as a planar platform for nanoelectronic devices
›9:40 (20min)
P. De Vincenzi - Tunable GaAsxP1–x Quantum Dot Emission
Tunable GaAsxP1–x Quantum-Dot Emission in Wurtzite GaP Nanowires
Tunable GaAsxP1–x Quantum-Dot Emission in Wurtzite GaP Nanowires
9:40 - 10:00 (20min)
P. De Vincenzi - Tunable GaAsxP1–x Quantum Dot Emission
Tunable GaAsxP1–x Quantum-Dot Emission in Wurtzite GaP Nanowires
›10:00 (20min)
A. Zelioli - Design and growth of GaAsBi and InGaAs
Design and growth of GaAsBi and InGaAs based Vertical-External-Cavity Surface-Emitting-Lasers
Design and growth of GaAsBi and InGaAs based Vertical-External-Cavity Surface-Emitting-Lasers
10:00 - 10:20 (20min)
A. Zelioli - Design and growth of GaAsBi and InGaAs
Design and growth of GaAsBi and InGaAs based Vertical-External-Cavity Surface-Emitting-Lasers
›10:20 (20min)
10:20 - 10:40 (20min)
Coffee break
›10:40 (30min)
Invited talk - A. Patanè
Ultra-Thin Semiconductors: From Epitaxy to Band Engineering and UV Photon Sensing
Ultra-Thin Semiconductors: From Epitaxy to Band Engineering and UV Photon Sensing
› Room Rovery - Bd Riou, 06660 Auron
10:40 - 11:10 (30min)
Invited talk - A. Patanè
Room Rovery - Bd Riou, 06660 Auron
Ultra-Thin Semiconductors: From Epitaxy to Band Engineering and UV Photon Sensing
11:10 - 12:30 (1h20)
2D MATERIALS
Room Rovery - Bd Riou, 06660 Auron
›11:10 (20min)
C. Sthioul - Epitaxial 2D HfSe2 semicond./TaSe2 metal
Epitaxial 2D HfSe2 Semiconductor/TaSe2 Metal van der Waals Heterostructure
Epitaxial 2D HfSe2 Semiconductor/TaSe2 Metal van der Waals Heterostructure
11:10 - 11:30 (20min)
C. Sthioul - Epitaxial 2D HfSe2 semicond./TaSe2 metal
Epitaxial 2D HfSe2 Semiconductor/TaSe2 Metal van der Waals Heterostructure
›11:30 (20min)
J. Kucharek - Multi-particle Excitonic Systems in WSe2/hBN
Multi-particle Excitonic Systems in WSe2 Grown on hBN by Molecular Beam Epitaxy
Multi-particle Excitonic Systems in WSe2 Grown on hBN by Molecular Beam Epitaxy
11:30 - 11:50 (20min)
J. Kucharek - Multi-particle Excitonic Systems in WSe2/hBN
Multi-particle Excitonic Systems in WSe2 Grown on hBN by Molecular Beam Epitaxy
›11:50 (20min)
P. Wojnar - Optically active indium selenide heterostructures
Optically active indium selenide crystal phase heterostructures grown by molecular beam epitaxy
Optically active indium selenide crystal phase heterostructures grown by molecular beam epitaxy
11:50 - 12:10 (20min)
P. Wojnar - Optically active indium selenide heterostructures
Optically active indium selenide crystal phase heterostructures grown by molecular beam epitaxy
›12:10 (20min)
S.V. Novikov - High-temperature MBE of hBN
High-temperature MBE of hBN for Deep-ultraviolet, Single-photon Emitters and Lateral Heterostructures
High-temperature MBE of hBN for Deep-ultraviolet, Single-photon Emitters and Lateral Heterostructures
12:10 - 12:30 (20min)
S.V. Novikov - High-temperature MBE of hBN
High-temperature MBE of hBN for Deep-ultraviolet, Single-photon Emitters and Lateral Heterostructures
›12:30 (1h)
12:30 - 13:30 (1h)
Lunch boxes
›16:00 (1h30)
16:00 - 17:30 (1h30)
Poster Session 1
Room Rovery, Bd Riou - 06660 AURON
›17:30 (30min)
› Room Rovery - Bd Riou, 06660 Auron
17:30 - 18:00 (30min)
Invited talk - B. Amstatt
Room Rovery - Bd Riou, 06660 Auron
III-Nitrides NWs based µLEDs: a solution for AR display technology
18:00 - 19:00 (1h)
PRODUCTION
Room Rovery - Bd Riou, 06660 Auron
›18:00 (20min)
S. Matta - Emerging Growth Opportunities for GaN Using MBE
Emerging Growth Opportunities for GaN Using Molecular Beam Epitaxy (MBE): From Research to Production
Emerging Growth Opportunities for GaN Using Molecular Beam Epitaxy (MBE): From Research to Production
18:00 - 18:20 (20min)
S. Matta - Emerging Growth Opportunities for GaN Using MBE
Emerging Growth Opportunities for GaN Using Molecular Beam Epitaxy (MBE): From Research to Production
›18:20 (20min)
E. Liao - GaN Power HEMT with Breakdown Voltage >800 V
GaN Power HEMT with Breakdown Voltage >800 V Grown by MBE
GaN Power HEMT with Breakdown Voltage >800 V Grown by MBE
18:20 - 18:40 (20min)
E. Liao - GaN Power HEMT with Breakdown Voltage >800 V
GaN Power HEMT with Breakdown Voltage >800 V Grown by MBE
›20:00 (3h)
› Movie Theater Le Riounet - Bd Georges Pompidou, 06660 Auron
20:00 - 23:00 (3h)
DEBATE & COCKTAIL-BUFFET. Why and how could be achieved MBE at lower economic and ecological costs ?. Please click here for the notice of the event
Movie Theater Le Riounet - Bd Georges Pompidou, 06660 Auron
