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17:00 - 18:00 (1h)
Registration
Room Rovery - Bd Riou, 06660 Auron
18:00 - 21:00 (3h)
Welcome reception
Room Rovery - Bd Riou, 06660 Auron
8:00 - 8:30 (30min)
Registration
8:30 - 9:00 (30min)
Opening
Room Rovery - Bd Riou, 06660 Auron
9:00 - 9:30 (30min)
Invited talk - L. Cerutti
Room Rovery - Bd Riou, 06660 Auron
MBE growth of mid-IR interband cascade lasers
https://eurombe2025.sciencesconf.org/data/program/599975.pdf 9:30 - 10:50 (1h20)
ANTIMONIDES
Room Rovery - Bd Riou, 06660 Auron
9:30 - 9:50 (20min)
V. Daumer - Antimonide based heterostructures
Antimonide based heterostructures: MBE growth strategies for infrared applications
9:50 - 10:10 (20min)
M. Bentley - InAs/GaInSb W-Quantum Well based Interband Cascade Lasers
InAs/GaInSb W-Quantum Well based Interband Cascade Lasers for Mid Infrared Emission
10:10 - 10:30 (20min)
P. Wojnar - One-dimensional nanostructures antimony triselenide
Formation of one dimensional nanostructures in the molecular beam epitaxy of antimony triselenide
10:30 - 10:50 (20min)
M. Fagot - Interband cascade lasers emitting below 3 µm
Interband cascade lasers emitting below 3 µm grown on GaAs substrate
10:50 - 11:10 (20min)
Coffee break
11:10 - 11:40 (30min)
Invited talk - D. V. Dinh
Room Rovery - Bd Riou, 06660 Auron
Properties of ScN and (Sc,Al)N alloys grown by plasma-assisted molecular beam epitaxy
11:40 - 13:00 (1h20)
NITRIDES
Room Rovery - Bd Riou, 06660 Auron
11:40 - 12:00 (20min)
Y. Cordier - ScAlN/GaN heterostructures
Ammonia-source molecular beam epitaxy of ScAlN/GaN heterostructures for high-power high-frequency applications
12:00 - 12:20 (20min)
A.F. Saavedra - Fabrication of a-plane AlN pseudo-substrates
Fabrication of a-plane AlN pseudosubstrates grown by Molecular Beam Epitaxy
12:20 - 12:40 (20min)
H. Zhang - Fully Relaxed (In,Ga)N Pseudo-Substrates
Growth of Fully Relaxed (In,Ga)N Pseudo-Substrates by a Two-Step Protocol Without Ex-situ Patterning
12:40 - 13:00 (20min)
P. John - Epitaxy of Self-assembled (Al,Sc)N nanowires on metallic TiN
Epitaxy of self-assembled (Al,Sc)N nanowires on metallic TiN: Towards vertical and flexible piezoelectric nanogenerators
13:00 - 14:00 (1h)
Lunch boxes
16:30 - 17:30 (1h)
NITRIDES
Room Rovery - Bd Riou, 06660 Auron
16:30 - 16:50 (20min)
M. Canciani - Morphology and structure of In-rich InGaN nanocolumns
Tuning the morphology and structure of In-rich InGaN nanocolumns suitable for biomedical application
16:50 - 17:10 (20min)
M. Siekacz - near-UV Laser Diodes by Plasma-Assisted MBE
New generation of near-UV Laser Diodes by Plasma Assisted MBE
17:10 - 17:30 (20min)
J. Brault - AlGaN based Heterostructures grown on hBN
AlGaN based Heterostructures grown on hBN by quasi van der Waals Molecular Beam Epitaxy for Ultra Violet Light Emitting Diodes
17:30 - 18:00 (30min)
Invited talk - M. Müller
Room Rovery - Bd Riou, 06660 Auron
Harnessing Redox Epitaxy for Tailored Functionalities at Oxide Heterointerfaces
18:00 - 19:00 (1h)
OXIDES
Room Rovery - Bd Riou, 06660 Auron
18:00 - 18:20 (20min)
A. Karg - κ-Ga₂O₃ thin films and related heterostructures
κ-Ga₂O₃ thin films and related heterostructures grown by Suboxide-MBE and conventional MBE
18:20 - 18:40 (20min)
A. Boelen - Elevated cryogenic permittivity of SrTiO3 films
Elevated cryogenic permittivity of epitaxial SrTiO3 films on silicon by stoichiometry and thickness control
18:40 - 19:00 (20min)
M. O. Bounab - Strong optical anisotropy in epitaxial SrO(SrTiO3)n
Strong optical anisotropy in epitaxial SrO(SrTiO3)n Ruddlesden–Popper thin layers
20:00 - 23:00 (3h)
VEECO USER MEETING
Le Dandy Club - Bd Ours de Saint-Erige, 06660 Auron
8:00 - 8:30 (30min)
Registration
8:30 - 9:00 (30min)
Invited talk - M. Brehm
Room Rovery - Bd Riou, 06660 Auron
Group-IV epitaxy at ultra-low temperatures for optoelectronic and quantum photonic applications
9:00 - 10:20 (1h20)
ULTRA-LOW TRE / PHOTONICS
Room Rovery - Bd Riou, 06660 Auron
9:00 - 9:20 (20min)
M. Silvestre - GaSb on Ge, Ge-on-Si and Ge-on-SiGe-on-Si
Direct MBE growth of GaSb on Ge, Ge-on-Si and Ge-on-SiGe-on-Si platforms for integrated mid-infrared photonics
9:20 - 9:40 (20min)
M. Brehm - Ge-rich nanosheets on silicon-on-insulator
MBE-grown Ge-rich nanosheets on silicon-on-insulator as a planar platform for nanoelectronic devices
9:40 - 10:00 (20min)
P. De Vincenzi - Tunable GaAsxP1–x Quantum Dot Emission
Tunable GaAsxP1–x Quantum-Dot Emission in Wurtzite GaP Nanowires
10:00 - 10:20 (20min)
A. Zelioli - Design and growth of GaAsBi and InGaAs
Design and growth of GaAsBi and InGaAs based Vertical-External-Cavity Surface-Emitting-Lasers
10:20 - 10:40 (20min)
Coffee break
10:40 - 11:10 (30min)
Invited talk - A. Patanè
Room Rovery - Bd Riou, 06660 Auron
Ultra-Thin Semiconductors: From Epitaxy to Band Engineering and UV Photon Sensing
11:10 - 12:30 (1h20)
2D MATERIALS
Room Rovery - Bd Riou, 06660 Auron
11:10 - 11:30 (20min)
C. Sthioul - Epitaxial 2D HfSe2 semicond./TaSe2 metal
Epitaxial 2D HfSe2 Semiconductor/TaSe2 Metal van der Waals Heterostructure
11:30 - 11:50 (20min)
J. Kucharek - Multi-particle Excitonic Systems in WSe2/hBN
Multi-particle Excitonic Systems in WSe2 Grown on hBN by Molecular Beam Epitaxy
11:50 - 12:10 (20min)
P. Wojnar - Optically active indium selenide heterostructures
Optically active indium selenide crystal phase heterostructures grown by molecular beam epitaxy
12:10 - 12:30 (20min)
S.V. Novikov - High-temperature MBE of hBN
High-temperature MBE of hBN for Deep-ultraviolet, Single-photon Emitters and Lateral Heterostructures
12:30 - 13:30 (1h)
Lunch boxes
16:00 - 17:30 (1h30)
Poster Session 1
Room Rovery, Bd Riou - 06660 AURON
17:30 - 18:00 (30min)
Invited talk - B. Amstatt
Room Rovery - Bd Riou, 06660 Auron
III-Nitrides NWs based µLEDs: a solution for AR display technology
18:00 - 19:00 (1h)
PRODUCTION
Room Rovery - Bd Riou, 06660 Auron
18:00 - 18:20 (20min)
S. Matta - Emerging Growth Opportunities for GaN Using MBE
Emerging Growth Opportunities for GaN Using Molecular Beam Epitaxy (MBE): From Research to Production
18:20 - 18:40 (20min)
E. Liao - GaN Power HEMT with Breakdown Voltage >800 V
GaN Power HEMT with Breakdown Voltage >800 V Grown by MBE
20:00 - 23:00 (3h)
DEBATE & COCKTAIL-BUFFET. Why and how could be achieved MBE at lower economic and ecological costs ?. Please click here for the notice of the event
Movie Theater Le Riounet - Bd Georges Pompidou, 06660 Auron
8:00 - 8:30 (30min)
Registration
Room Rovery - Bd Riou, 06660 Auron
8:30 - 9:00 (30min)
Invited talk - W. Wegscheider
Room Rovery - Bd Riou, 06660 Auron
Hybrid Josephson junctions (JJs) realized in superconductor - semiconductor heterostructures
9:00 - 10:20 (1h20)
QUANTUM
Room Rovery - Bd Riou, 06660 Auron
9:00 - 9:20 (20min)
P. Ballet - Selective area epitaxy of in-plane HgTe nanowires
Selective area epitaxy of in-plane HgTe nanowires on CdTe(001) substrate
9:20 - 9:40 (20min)
M. Hocevar - Supercond.-semicond. hybrids
Superconductor-semiconductor hybrids for quantum technologies: looking for alternatives to Al
9:40 - 10:00 (20min)
R. Rousset-Zenou - Semicond.-supercond. nanowires
MBE growth of parallel hybrid semiconductor-superconductor nanowires for quantum devices
10:00 - 10:20 (20min)
D. Curcio - Metamorphic InAs 2DEGs for quantum computation platforms
Metamorphic InAs 2DEGs for quantum computation platforms
10:20 - 10:40 (20min)
Coffee break
10:40 - 11:10 (30min)
Invited talk - G. Krizman
Room Rovery - Bd Riou, 06660 Auron
The birth of ferroelectric topological insulators
11:10 - 12:10 (1h)
NOVEL MATERIALS - TOPOLOGICAL
Room Rovery - Bd Riou, 06660 Auron
11:10 - 11:30 (20min)
T. Zakusylo - Ge-doped PbSe ferroelec. Rashba semiconductor
MBE growth of Ge-doped PbSe ferroelectric Rashba semiconductor
11:30 - 11:50 (20min)
I. Florea - AlN/NbN epitaxial heterostructures
AlN/NbN epitaxial heterostructures on Si: polytypes, strain and polarity
11:50 - 12:10 (20min)
M.S. Song - Zintl Eu3In2As4 and Eu5In2As6 Nanowires
Mutual Exchange Growth of Zintl Eu3In2As4 and Eu5In2As6 Nanowires by Molecular Beam Epitaxy
12:10 - 13:30 (1h20)
Lunch boxes
16:00 - 17:30 (1h30)
Poster Session 2
Room Rovery, Bd Riou - 06660 AURON
17:30 - 18:00 (30min)
Invited talk - D. Lanzoni
Room Rovery - Bd Riou, 06660 Auron
Machine Learning for the simulation of strained-film growth: tackling long-time scales with Finite Element Method accuracy
18:00 - 19:00 (1h)
NEW CONCEPTS
Room Rovery - Bd Riou, 06660 Auron
18:00 - 18:20 (20min)
J. Cibert - Dual-adatom diffusion-limited growth model for NWs
Dual-adatom diffusion-limited growth model for compound nanowires: Application to InAs nanowires
18:20 - 18:40 (20min)
L. Desplanque - Bottom gated in-plane selective area grown InSb nanowires
Bottom gated in-plane selective area grown InSb nanowires on GaAs(111)B
18:40 - 19:00 (20min)
G. B. Hirpessa - High-mobility InAs-AlSb core-shell nanowire heterostructures
High-mobility InAs-AlSb core-shell nanowire heterostructures for thermoelectric energy conversion
20:00 - 23:00 (3h)
RIBER USER MEETING-BANQUET. Please click here for the notice of the event
Hotel Restaurant Bataclan Plateau, Rte de Nabinas, 06660
8:00 - 8:30 (30min)
Registration
Movie Theater Le Riounet - Bd Georges Pompidou, 06660 Auron
8:30 - 9:00 (30min)
Invited talk - T. Hakkarainen
Movie Theater Le Riounet - Bd Georges Pompidou, 06660 Auron
GaSb-based quantum dot emitters for telecom wavelengths
9:00 - 10:20 (1h20)
QUANTUM DOTS
Movie Theater Le Riounet - Bd Georges Pompidou, 06660 Auron
9:00 - 9:20 (20min)
D. Deutsch - Droplet etched InxGa1-xAs quantum dots
Droplet etched InxGa1-xAs quantum dots embedded in In0.52Al0.48As for optical C-band emission
9:20 - 9:40 (20min)
H. Jia - Investigations of C-band InAs/InP Quantum Dots
Investigations of C-band InAs/InP Quantum Dots Grown by Molecular Beam Epitaxy Using Indium Flush Technology
9:40 - 10:00 (20min)
A. Ludwig - Wafer scale quantum dot growth
Wafer scale quantum dot growth control for scalable multi single photon sources technology
10:00 - 10:20 (20min)
P. Avdienko - Electrically tunable orbital couplings in InAs/InGaAs-molecules
Electrically tunable orbital couplings in MBE grown InAs/InGaAs QD-molecules emitting in O-band
10:20 - 10:40 (20min)
Coffee break
10:40 - 11:10 (30min)
Invited talk - E. Luna
Movie Theater Le Riounet - Bd Georges Pompidou, 06660 Auron
Interface properties of (Al)GaAs/GaAsBi quantum wells grown by MBE
11:10 - 12:30 (1h20)
NOVEL MATERIALS - PHOTOVOLTAIC
Movie Theater Le Riounet - Bd Georges Pompidou, 06660 Auron
11:10 - 11:30 (20min)
A. Delamarre - GaAs growth on graphene covered substrates
GaAs growth on graphene covered substrates towards substrate recycling
11:30 - 11:50 (20min)
K. T. Tran - Earth abundant oxynitrides alloys for tandem solar cells
Earth abundant oxynitrides alloys for tandem solar cells
11:50 - 12:10 (20min)
R. Lemerle - Correlation microstructure/optoelec. properties of Zn3P2
The correlation between the microstructure and the optoelectronic properties of Zn3P2 grown by Selective Area Epitaxy
12:10 - 12:30 (20min)
T. Henksmeier - Remote epitaxy of III-V films on a universal template
Remote epitaxy of III-V films on a universal template
12:30 - 13:30 (1h)
Closing - Lunch boxes
Movie Theater Le Riounet - Bd Georges Pompidou, 06660 Auron
