Invited Speakers

 

 

Teemu Hakkarainen 
       University of Tampere Finland Droplet epitaxy of GaSb/AlGaSb QDs
Esperanza Luna
       Paul Drude Institute, Berlin, Germany Interface properties of (Al)GaAs/GaAsBi quantum wells grown by MBE
Moritz Brehm
       University of Linz, Austria Group-IV epitaxy at ultra-low temperatures for optoelectronic and quantum photonic applications
Duc Van Dinh
       Paul Drude Institute, Berlin, Germany Properties of ScN and (Sc,Al)N alloys grown by plasma-assisted molecular beam epitaxy
Gauthier Krizman
       ENS, Paris, France The birth of ferroelectric topological insulators
Werner Wegscheider
       ETH Zurich, Swizerland Hybrid Josephson junctions (JJs) realized in superconductor - semiconductor heterostructure
Amalia Patane
       University of Nottingham, UK Epitaxy of GaSe coupled to graphene: from in-situ band engineering to photon sensing
Laurent Cerutti
       IES, University of Montpellier, France MBE growth of mid-IR interband cascade lasers
Daniele Lanzoni
       University of Milano, Italy Machine Learning for the simulation of strained-film growth: tackling long-time scales with Finite Element Method accuracy
Philippe Gilet
       Aledia, Grenoble, France III-Nitrides NWR based µLEDs: a solution for AR display technology
Martina Müller
       University of Konstanz, Germany Advanced functionalities in complex oxide thin films

 

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