Program

Tuesday, March 11, 2025
08:00
09:00
10:00
11:00
12:00
13:00
14:00
15:00
16:00
17:00
18:00
19:00
20:00
21:00
22:00
23:00
›8:00 (30min)
›8:30 (30min)
Invited talk - M. Brehm
Group-IV epitaxy at ultra-low temperatures for optoelectronic and quantum photonic applications
› Room Rovery - Bd Riou, 06660 Auron
›9:00 (1h20)
› Room Rovery - Bd Riou, 06660 Auron
›9:00 (20min)
M. Silvestre - GaSb on Ge, Ge-on-Si and Ge-on-SiGe-on-Si
Direct MBE growth of GaSb on Ge, Ge-on-Si and Ge-on-SiGe-on-Si platforms for integrated mid-infrared photonics
›9:20 (20min)
M. Brehm - Ge-rich nanosheets on silicon-on-insulator
MBE-grown Ge-rich nanosheets on silicon-on-insulator as a planar platform for nanoelectronic devices
›9:40 (20min)
P. De Vincenzi - Tunable GaAsxP1–x Quantum Dot Emission
Tunable GaAsxP1–x Quantum-Dot Emission in Wurtzite GaP Nanowires
›10:00 (20min)
A. Zelioli - Design and growth of GaAsBi and InGaAs
Design and growth of GaAsBi and InGaAs based Vertical-External-Cavity Surface-Emitting-Lasers
›10:20 (20min)
›10:40 (30min)
Invited talk - A. Patanè
Ultra-Thin Semiconductors: From Epitaxy to Band Engineering and UV Photon Sensing
› Room Rovery - Bd Riou, 06660 Auron
›11:10 (1h20)
› Room Rovery - Bd Riou, 06660 Auron
›11:10 (20min)
C. Sthioul - Epitaxial 2D HfSe2 semicond./TaSe2 metal
Epitaxial 2D HfSe2 Semiconductor/TaSe2 Metal van der Waals Heterostructure
›11:30 (20min)
J. Kucharek - Multi-particle Excitonic Systems in WSe2/hBN
Multi-particle Excitonic Systems in WSe2 Grown on hBN by Molecular Beam Epitaxy
›11:50 (20min)
P. Wojnar - Optically active indium selenide heterostructures
Optically active indium selenide crystal phase heterostructures grown by molecular beam epitaxy
›12:10 (20min)
S.V. Novikov - High-temperature MBE of hBN
High-temperature MBE of hBN for Deep-ultraviolet, Single-photon Emitters and Lateral Heterostructures
›12:30 (1h)
›16:00 (1h30)
›17:30 (30min)
Invited talk - B. Amstatt
III-Nitrides NWs based µLEDs: a solution for AR display technology
› Room Rovery - Bd Riou, 06660 Auron
›18:00 (1h)
› Room Rovery - Bd Riou, 06660 Auron
›18:00 (20min)
S. Matta - Emerging Growth Opportunities for GaN Using MBE
Emerging Growth Opportunities for GaN Using Molecular Beam Epitaxy (MBE): From Research to Production
›18:20 (20min)
E. Liao - GaN Power HEMT with Breakdown Voltage >800 V
GaN Power HEMT with Breakdown Voltage >800 V Grown by MBE
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