Program

Wednesday, March 12, 2025
08:00
09:00
10:00
11:00
12:00
13:00
14:00
15:00
16:00
17:00
18:00
19:00
20:00
21:00
22:00
23:00
›8:00 (30min)
› Room Rovery - Bd Riou, 06660 Auron
›8:30 (30min)
Invited talk - W. Wegscheider
Hybrid Josephson junctions (JJs) realized in superconductor - semiconductor heterostructures
› Room Rovery - Bd Riou, 06660 Auron
›9:00 (1h20)
› Room Rovery - Bd Riou, 06660 Auron
›9:00 (20min)
P. Ballet - Selective area epitaxy of in-plane HgTe nanowires
Selective area epitaxy of in-plane HgTe nanowires on CdTe(001) substrate
›9:20 (20min)
M. Hocevar - Supercond.-semicond. hybrids
Superconductor-semiconductor hybrids for quantum technologies: looking for alternatives to Al
›9:40 (20min)
R. Rousset-Zenou - Semicond.-supercond. nanowires
MBE growth of parallel hybrid semiconductor-superconductor nanowires for quantum devices
›10:00 (20min)
D. Curcio - Metamorphic InAs 2DEGs for quantum computation platforms
Metamorphic InAs 2DEGs for quantum computation platforms
›10:20 (20min)
›10:40 (30min)
Invited talk - G. Krizman
The birth of ferroelectric topological insulators
› Room Rovery - Bd Riou, 06660 Auron
›11:10 (1h)
› Room Rovery - Bd Riou, 06660 Auron
›11:10 (20min)
T. Zakusylo - Ge-doped PbSe ferroelec. Rashba semiconductor
MBE growth of Ge-doped PbSe ferroelectric Rashba semiconductor
›11:30 (20min)
I. Florea - AlN/NbN epitaxial heterostructures
AlN/NbN epitaxial heterostructures on Si: polytypes, strain and polarity
›11:50 (20min)
M.S. Song - Zintl Eu3In2As4 and Eu5In2As6 Nanowires
Mutual Exchange Growth of Zintl Eu3In2As4 and Eu5In2As6 Nanowires by Molecular Beam Epitaxy
›12:10 (1h20)
›16:00 (1h30)
›17:30 (30min)
Invited talk - D. Lanzoni
Machine Learning for the simulation of strained-film growth: tackling long-time scales with Finite Element Method accuracy
› Room Rovery - Bd Riou, 06660 Auron
›18:00 (1h)
› Room Rovery - Bd Riou, 06660 Auron
›18:00 (20min)
J. Cibert - Dual-adatom diffusion-limited growth model for NWs
Dual-adatom diffusion-limited growth model for compound nanowires: Application to InAs nanowires
›18:20 (20min)
L. Desplanque - Bottom gated in-plane selective area grown InSb nanowires
Bottom gated in-plane selective area grown InSb nanowires on GaAs(111)B
›18:40 (20min)
G. B. Hirpessa - High-mobility InAs-AlSb core-shell nanowire heterostructures
High-mobility InAs-AlSb core-shell nanowire heterostructures for thermoelectric energy conversion
›20:00 (3h)
› Hotel Restaurant Bataclan Plateau, Rte de Nabinas, 06660
Session
Speech
Logistics
Break
Tour
Online user: 2 Privacy | Accessibility
Loading...